isc Silicon PNP Darlingtion Power Transistor DESC.
MJ2500 - 10 AMPERE DARLINGTON POWER TRANSISTORS
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ2500/D MJ2955 (See 2N3055) MJ2955A (See 2N3055A) Medium-Power Complementary Silicon.MJ2500 - (MJ2500 / MJ2501) SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package www.datasheet4u.com ·DARLINGTON ·High DC c.MJ2501 - (MJ2500 / MJ2501) SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package www.datasheet4u.com ·DARLINGTON ·High DC c.MJ2500 - (MJ2500 / MJ2501) COMPLEMENTARY POWER DARLINGTONS
PNP MJ2500 – MJ2501 COMPLEMENTARY POWER DARLINGTONS The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington .MJ2501 - (MJ2500 / MJ2501) COMPLEMENTARY POWER DARLINGTONS
PNP MJ2500 – MJ2501 COMPLEMENTARY POWER DARLINGTONS The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington .MJ2500 - PNP Transistor
MJ2500-MJ2501-PNP MJ3000-MJ3001-NPN High-reliability discrete products and engineering services since 1977 COMPLEMENTARY SILICON DARLINGTON POWER TR.MJ2500 - PNP Transistor
isc Silicon PNP Darlingtion Power Transistor DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 1000 (Min) @ IC = -5A ·C.