MMST3906-G Datasheet | Specifications & PDF Download

Production specification PNP Silicon Epitaxial Planar Transistor FEATURES  Power dissipation.  Epitaxial planar die construction.  Complementary

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Transistors UMT3906/SST3906/MMST3906 PNP General Purpose Transistor UMT3906 / SST3906 / MMST3906 (NRND) zFeatures 1) BVCEO>−40V (IC=−1mA) 2) Compl

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PNP General Purpose Transistor MMST3906 FEATURES • Ideal for Medium Power Amplification and Switching • Complementary NPN Type available(MMST3904) M

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SMD Type PNP Transistors MMST3906 (MMST3906) ■ Features ● Epitaxial planar die construction ● Complementary to MMST3904 Transistors 1.Base 2.Emitte

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Features  BVCEO > -40V  IC = -200mA Collector Current  Epitaxial Planar Die Construction  Ultra-Small Surface Mount Package  Complementary NPN Ty

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General Purpose Transistor MMST3906-G (PNP) RoHS Device Features - Epitaxial planar die construction. - Ultra-small surface mount package. Mechanica

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RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-323 BIPOLAR TRANSISTORS TRANSISTOR (PNP) MMST3906 FEATURES * Power dissipation Pcm: 0.2 W (Tamb=25

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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