MP1008-G Datasheet | Specifications & PDF Download

W TE PO WE R SEM IC O ND U C TO RS MP1000 – MP1010 10A BRIDGE RECTIFIER Features Diffused Junction High Current Capability High Case Die

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DMP1008UCA9 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features VDSS -8V RDS(ON) Max 5.7mΩ@VGS = -4.5V ID Max TA = +25°C -16A Description

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DMP1008UCB9 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary VDSS -8V RDS(ON) Max 5.7mΩ@VGS = -4.5V ID Max TA = +25°C -13.2A Description This 3r

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® WON-TOP ELECTRONICS MP1000G – MP1010G 10A GLASS PASSIVATED SINGLE PHASE BRIDGE RECTIFIER Pb Features  Glass Passivated Die Construction  High Cu

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www.DataSheet4U.com Silicon Bridge Rectifiers MP1000-G THRU MP1010-G (RoHS Device) Reverse Voltage: 50 ~ 1000 Volts Forward Current: 10 Amp Features:

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www.DataSheet4U.com Silicon Bridge Rectifiers COMCHIP www.comchiptech.com MP1000 Thru 1010 Reverse Voltage: 50 - 1000 Volts Forward Current: 10 Amp

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www.DataSheet4U.com DC COMPONENTS CO., LTD. R MP10005 THRU MP1010 RECTIFIER SPECIALISTS TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RE

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RF AMPLIFIER MODEL BXMP1008 Features High Power Output: Greater Than 2 Watts High Third Order Intercept: +43 dBm Typical High IP2: +63 dBm Typic

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