MSB Datasheet | Specifications & PDF Download

InftoerrMnsMatlEaSrUAsCeDoAnOfiTnldeycehntnioallogy Co., Ltd MSB2521 PND Application Processor Preliminary Data Sheet Version 0.1 Doc. No.: 201101002

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6.0A Single Phase Glass passivated Bridge Rectifiers - 50V~1000V MSB60AN THRU MSB60MN PRIMARY CHARACTERISTICS VRRM 50V~1000V IO 6.0A VF 1.1V I2

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6.0A Single Phase Glass passivated Bridge Rectifiers - 50V~1000V MSB60AN THRU MSB60MN PRIMARY CHARACTERISTICS VRRM 50V~1000V IO 6.0A VF 1.1V I2

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6.0A Single Phase Glass passivated Bridge Rectifiers - 50V~1000V MSB60AN THRU MSB60MN PRIMARY CHARACTERISTICS VRRM 50V~1000V IO 6.0A VF 1.1V I2

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SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Ampere MSB301S THRU MSB307S FEATURES * Good for au

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MSB92ASWT1G, MSB92AS1WT1G PNP Silicon General Purpose High Voltage Transistor This PNP Silicon Planar Transistor is designed for general purpose ampl

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Green MSB30KH 3.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@TA = +25°C) VRRM (V) 800 IO (A) 3.0 VF (V) 1.1 IR (μA) 5 De

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MSB92WT1G, MSB92AWT1G PNP Silicon General Purpose High Voltage Transistor This PNP Silicon Planar Transistor is designed for general purpose amplifie

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MSB92WT1, MSB92AWT1 Preferred Device PNP Silicon General Purpose High Voltage Transistor This PNP Silicon Planar Transistor is designed for general pu

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MICRO ELECTRONICS MSB557TA-5 HIGH BRIGHTNESS BLINKING LED LAMP DESCRIPTION MSB557TA-5 is a high brightness output GaAlAs red LED lamp with a 5mm d

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MSB710−RT1 Preferred Device PNP General Purpose Amplifier Transistor Surface Mount Features • Pb−Free Package is Available MAXIMUM RATINGS (TA = 25°

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MSB30 Glass Passivated Single Phase Rectifier Bridge VRRM 800 to 1800V IFAV 30Amp Circuit + ~ ~ - Module Type TYPE MSB30-08 MSB30-12 MSB30-16 M

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MSB92T1G PNP Silicon General Purpose High Voltage Transistor This PNP Silicon Planar Transistor is designed for general purpose amplifier applicatio

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6.0A Single Phase Glass passivated Bridge Rectifiers - 50V~1000V MSB60AN THRU MSB60MN PRIMARY CHARACTERISTICS VRRM 50V~1000V IO 6.0A VF 1.1V I2

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Elektronische Bauelemente MSB301S-C~MSB310S-C Voltage 100V~1000V 3.0 Amp Surface Mount Bridge Rectifiers RoHS Compliant Product A suffix of “-C” spe

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Elektronische Bauelemente MSB301S-C~MSB310S-C Voltage 100V~1000V 3.0 Amp Surface Mount Bridge Rectifiers RoHS Compliant Product A suffix of “-C” spe

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MSB30JL Green 3.0A SURFACE-MOUNT STANDARD RECOVERY BRIDGE RECTIFIER Product Summary (@ TA = +25°C) VRRM (V) 600 IO (A) 3.0 VF (V) 0.92 IR (μA) 5

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MSB301-MSB307 Glass passivated Recovery Bridge Rectifiers General description Single Phase 3.0Amp Glass passivated Recovery Bridge Rectifiers MSBL P

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LESHAN RADIO COMPANY, LTD. PNP General Purpose Amplifier Transistor Surface Mount COLLECTOR 3 MSB710-RT1 3 2 BASE 1 EMITTER 2 1 CASE 318D–04, STY

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MSB92ASWT1 Preferred Device PNP Silicon General Purpose High Voltage Transistor This PNP Silicon Planar Transistor is designed for general purpose amp

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