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54S10 - STTL type three 3-input NAND gate
54S10/74S10 STTL 3 : tpd=3ns Pd=19mW/ (1/3) : : : B H × L × Y L H H H A H L × × C H × × L 74Ⅱ Vcc VIH VIL IOH IOL TA -40 4.75 2 0..54LS26 - LSTTL type 2 input NAND gate
54LS26/74LS26 LSTTL 2 (, OC) : tpd=16ns Pd=2.0mW/ : (1/4) : : : 74Ⅱ Vcc VIH VIL VOH IOL TA -40 4.75 2 0.8 15 8 85 -55 5 5.25 4.5 2 .74LS26 - LSTTL type 2 input NAND gate
54LS26/74LS26 LSTTL 2 (, OC) : tpd=16ns Pd=2.0mW/ : (1/4) : : : 74Ⅱ Vcc VIH VIL VOH IOL TA -40 4.75 2 0.8 15 8 85 -55 5 5.25 4.5 2 .74S10 - STTL type three 3-input NAND gate
54S10/74S10 STTL 3 : tpd=3ns Pd=19mW/ (1/3) : : : B H × L × Y L H H H A H L × × C H × × L 74Ⅱ Vcc VIH VIL IOH IOL TA -40 4.75 2 0..MBM30LV0064 - 64M (8M X 8) BIT NAND-type
FUJITSU SEMICONDUCTOR DATA SHEET DS05-20878-3E FLASH MEMORY CMOS 64M (8M × 8) BIT NAND-type MBM30LV0064 s DESCRIPTION The MBM30LV0064 device is a .MBM30LV0032 - 32M (4M X 8) BIT NAND-type
FUJITSU SEMICONDUCTOR DATA SHEET DS05-20884-2E FLASH MEMORY CMOS 32M (4M × 8) BIT NAND-type MBM30LV0032 s DESCRIPTION The MBM30LV0032 device is a .MBM30LV0128 - 128 M (16 M X 8) BIT NAND-type
FUJITSU SEMICONDUCTOR DATA SHEET DS05-20885-1E FLASH MEMORY CMOS 128 M (16 M × 8) BIT NAND-type MBM30LV0128 s DESCRIPTION The MBM30LV0128 device i.