
NGB8206N (ON Semiconductor)
Ignition IGBT
NGB8206N, NGB8206AN
Ignition IGBT
20 A, 350 V, N−Channel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuit
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NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N.
Ignition IGBT
NGB8206N Distributor