NTE235 Datasheet | Specifications & PDF Download

NTE235 Silicon NPN Transistor Final RF Power Output Description: The NTE235 is an NPN silicon transistor in a TO220 type case designed for use in high

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NTE2355 (NPN) & NTE2356 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 10k Bias Resistors Features: D Built–In Bias Resistor (R1 = 10kΩ,

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NTE2357 (NPN) & NTE2358 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 22k Bias Resistors Features: D Built–In Bias Resistor (R1 = 22kΩ

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NTE2354 Silicon NPN Transistor High Voltage Horizontal Output for High Definition CRT Applications: D High–definition color display horizontal deflect

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NTE2353 Silicon NPN Transistor TV Horizontal Deflection Output w/Damper Diode Features: D High Speed: tf = 100nsec D High Breakdown Voltage: VCBO = 15

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NTE2351 (NPN) & NTE2352 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Features: D High DC Current Gain: hFE (1) = 2000 Min @ V

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NTE2349 (NPN) & NTE2350 (PNP) Silicon Darlington Transistors High Current, General Purpose Description: The NTE2349 (NPN) and NTE2350 (PNP) are silic

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NTE2357 (NPN) & NTE2358 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 22k Bias Resistors Features: D Built–In Bias Resistor (R1 = 22kΩ,

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NTE2359 (NPN) & NTE2360 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 47k Bias Resistors Features: D Built–In Bias Resistor (R1 = 47kΩ,

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NTE2351 (NPN) & NTE2352 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Features: D High DC Current Gain: hFE (1) = 2000 Min @ VC

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NTE2355 (NPN) & NTE2356 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 10k Bias Resistors Features: D Built–In Bias Resistor (R1 = 10kΩ

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