NTH4L040N120M3S (ON Semiconductor)
SiC MOSFET
Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200 V, M3S, TO-247-4L NTH4L040N120M3S
Features
• Typ. RDS(on) = 40 mW @ VGS = 18 V • Ultra Low Gat
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Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm.
SiC MOSFET
NTH4L040N120M3S Distributor
