Silicon Carbide (SiC) MOSFET – 32 mohm, 650 V, M.
ON Semiconductor
NVHL045N065SC1 - SiC MOSFET
Silicon Carbide (SiC) MOSFET – 32 mohm, 650 V, M2, TO-247-3L NVHL045N065SC1 Features • Typ. RDS(on) = 32 mW @ VGS = 18 V Typ. RDS(on) = 42 mW @ VGS =.
