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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MC145407/D MC145407 Advance Information 5 Volt Only Driver/Receiver EIA–232–E and CC

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Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 85 ns • Sector Erase Architecture – Sixty-three

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Features • Single-voltage Operation – 5V Read – 5V Reprogramming • Fast Read Access Time - 55 ns • Internal Program Control and Timer • Sector Archite

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Am29LV017D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fuj

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www.DataSheet4U.com Features • Single Supply for Read and Write: 2.7V to 3.3V (BV), 3.0V to 3.3V (LV) • Access Time – 90 ns • Sector Erase Architectu

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www.DataSheet4U.com Features • • • • • • • • • • Single-voltage Operation Read/Write Operation: 2.7V to 3.6V (BV). 3.0V to 3.6V(LV) Fast Read Access

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Features • Single Voltage Operation • • • • • • • • • – 5V Read – 5V Reprogramming Fast Read Access Time - 45 ns Internal Program Control and Timer 8K

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Features • 4.5V to 5.5V Read/Write • Access Time – 90 ns • Sector Erase Architecture – Thirty 32K Word (64K byte) Sectors with Individual Write Lockou

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INTEGRATED CIRCUITS DATA SHEET TZA1015 Data amplifier and laser supply circuit for CD and read-only optical systems (HDALAS) Product specification Su

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TOSHIBA MOS MEMORY PRODUCT TMM24128AP / AF 16,384 WORD X 8 BIT TM M24128AP / AFONE TIME PROGRAMMABLE READ ONLY MEMORY N CHANNEL SILICON STACKED GATE M

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Features • 4.5V to 5.5V Read/Write • Access Time – 90 ns • Sector Erase Architecture – Thirty 32K Word (64K byte) Sectors with Individual Write Lockou

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Features • 4.5V to 5.5V Read/Write • Access Time – 90 ns • Sector Erase Architecture – Thirty 32K Word (64K byte) Sectors with Individual Write Lockou

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Features • Single Voltage Operation – 5V Read – 5V Reprogramming • Fast Read Access Time – 55 ns • Internal Program Control and Timer • 8K Bytes Boot

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HY29F080 8 Megabit (1M x 8), 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n Hi

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Am29LV160D 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS s Single power supply operat

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PRELIMINARY Am29F002/Am29F002N 2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS s Single power suppl

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,commodore ~ aemlconduct:ar group ~[M]@® MPS 2333 STATIC READ ONLY MEMORY (4096x8) [________23__~ _S_TA_J_IC_R_~__D _ON_r_Y_M_E_M_OR_Y__(__~X_8_)

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HY29F002T 2 Megabit (256K x 8), 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n

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