GaAs-Infrarot-Lumineszenzdiode (950 nm, 300 µm Kantenlänge) GaAs Infrared Emitting Diode(950 nm, 12 mil) F 0118J Vorläufige Daten / Preliminary data

GaAs-Infrarot-Lumineszenzdiode (950 nm, Enhanced Power) GaAs Infrared Emitting Diode (950 nm, Enhanced Power) F 0118G Vorläufige Daten / Preliminary

Hyper TOPLED® RG Hyper-Bright LED Lead (Pb) Free Product - RoHS Compliant LS T776, LA T776, LO T776, LY T776 Besondere Merkmale • Gehäusetyp: weißes

2013-06-19 TOPLED Datasheet Version 1.0 LY T67K TOPLED, SMT LED with integrated reflector. With our great experience in SMT LED we are able to offer

Prowdwuwk.todsartaemn-bolast.tco|mVersion 1.1 BPX 89   BPX 89 Array Linear Silicon NPN Phototransistor Arrays Applications ——Industrial Automation (

Hyper 3 mm (T1) LED, Diffused Hyper-Bright, Wide-Angle LED LS 3386, LA 3386, LO 3386, LY 3386 Besondere Merkmale • Gehäusetyp: eingefärbtes, diffuses

IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4258 SFH 4259

Prowdwuwk.todsartaemn-bolast.tco|mVersion 1.1 BP 104 FAS   BP 104 FAS DIL SMT Silicon PIN Photodiode with Daylight Blocking Filter Applications ——LI

Prowdwuwk.todsartaemn-bolast.tco|mVersion 1.1 BPW 34 FSR   BPW 34 FSR DIL SMT Silicon PIN Photodiode with Daylight Blocking Filter Applications ——El

2007-05-23 BIOFY® Sensor Version 1.1 SFH 7072 Features: • Multi chip package featuring two green emitters, one red emitter, one infrared emitter and

Opto Semiconductors Super TOPLED® High-Current LED LS T672, LO T672, LY T672 LG T672, LP T672 VPL06724 Besondere Merkmale q Gehäusebauform: P-LCC-2

Prowdwuwk.todsartaemn-bolast.tco|mVersion 1.1 BP 103   BP 103 TO18 Silicon NPN Phototransistor Applications ——Electronic Equipment ——Industrial Auto

Prowdwuwk.todsartaemn-bolast.tco|mVersion 1.1 BPW 34 BS   BPW 34 BS DIL SMT Silicon PIN Photodiode with Enhanced Blue Sensitivity; in SMT Applicatio

Hyper 3 mm (T1) LED, Diffused Hyper-Bright LED LS 3366, LA 3366, LO 3366, LY 3366 Besondere Merkmale • Gehäusetyp: eingefärbtes, diffuses 3 mm (T1) G

Impuls-Laserdiode im Plastikgehäuse 10 W Spitzenleistung Pulsed Laser Diode in Plastic Package 10 W Peak Power SPL PL85 Besondere Merkmale • Kostengü

2014-01-16 High Power Infrared Emitter (850 nm) IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.1 / acc. to OS-PCN-2009-021-A2 SFH 4

Hyper 5 mm (T1 ¾) LED, Non Diffused Hyper-Bright LED LS 5436, LO 5436, LY 5436 Besondere Merkmale • Gehäusetyp: farbloses, klares 5 mm (T1 ¾) Gehäuse

2013-06-19 TOPLED Datasheet Version 1.0 (Replacement in due course) LG T679 TOPLED, SMT LED with integrated reflector. With our great experience in S

Prowdwuwk.todsartaemn-bolast.tco|mVersion 1.1 BPW 21   BPW 21 TO39 Ambient Light Sensor Silicon Photodiode for the Visible Spectral Range Applicatio