P300 Datasheet | Specifications & PDF Download

Translated from Chinese (Simplified) to English - www.onlinedoctranslator.com IP3005 Ultra-high precision built-inMOSFETSingle lithium battery prote

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Power Integrated Processor for Digital Amplifier NTP3000 NTP3000 1CHIP 2.1CHANNELFULLDIGITALAMPLIFIER Features Stereo (30W ⅹ 2) 2.1 channel (15Wⅹ2

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6MBP300RA060 IGBT-IPM R series Features · Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss

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www.DataSheet4U.com EUROPOWER PMP1000/PMP3000/PMP5000 User Manual Version 1.0 November 2006 EUROPOWER PMP1000/PMP3000/PMP5000 IMPORTANT SAFETY INST

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isc N-Channel MOSFET Transistor IRFP3006，IIRFP3006 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤2.5mΩ ·Enhancement mode: ·100% avalanche t

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GBP3005-GBP310 Silicon Bridge Rectifiers VOLTAGE RANGE: 50 --- 1000 V CURRENT: 3.0 A Features Rating to 1000V PRV Surge overload rating to 70 Ampere

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P300A, P300B, P300D, P300G, P300J, P300K, P300K www.vishay.com Vishay General Semiconductor General Purpose Plastic Rectifier DO-201AD FEATURES •

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P3004ND5G N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 30mΩ @VGS = 10V -40V 55mΩ @VGS = -10V ID 12A -8.8A Channel

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5000W Transient Voltage Suppressor A5KP-G Series Breakdown Voltage: 6.8 to 440 Volts Peak Pulse Power: 5000 Watts RoHS Device Features - Glass passi

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www.vishay.com VS-GP300TD60S Vishay Semiconductors Dual INT-A-PAK Low Profile “Half Bridge” (Trench PT IGBT), 300 A Proprietary Vishay IGBT Silicon

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® WON-TOP ELECTRONICS Features  Glass Passivated Die Construction  20000W Peak Pulse Power Dissipation  20V – 300V Standoff Voltage  Uni- and Bi-D

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GENERAL PURPOSE RECTIFIER BY251 ~ BY255 General Purpose Rectifier Features  Glass passivated chip junction  Low forward voltage  Low reverse l

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MCP3004/3008 2.7V 4-Channel/8-Channel 10-Bit A/D Converters with SPI Serial Interface Features • 10-bit resolution • ± 1 LSB max DNL • ± 1 LSB max I

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Gas Discharge Tube (GDT) Data Sheet 2R-8*6 SERIES Features ■ Provide ultra-fast response to surge voltage from slow-rising surge of 100V/s to rapid-

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http://www.fujielectric.com/products/semiconductor/ 6MBP300VEA060-50 IGBT Modules IGBT MODULE (V series) 600V / 300A / IPM Features • Temperature

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ADVANCED PRESSURE TECHNOLOGY Series AP 30, 35 & 36 1/4 INCH DIAPHRAGM VALVE Springless – manual and pneumatic (NC & NO) Engineering Data — Series AP

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5000W Transient Voltage Suppressor 5KP-G Series Breakdown Voltage: 6.8 to 440 Volts Peak Pulse Power: 5000 Watts RoHS Device Features - Glass passiv

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MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by TP3006/D NPN Silicon RF Power Transistor The TP3006 is designed for cellul

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MXP3000 Series GaAs PIN Photodiode Chips OPTO ELECTRONIC PRODUCTS P RODUCT P REVIEW DESCRIPTION KEY FEATURES W W W . Microsemi . COM Microsemi’s

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