PGE 608 01 Erbium-Doped Fiber Amplifier for Digit.
2N1191 - PNPgermanium transistors
2N1191 thru 2N1194 (GERMANIUM) All leads isolated PNPgermanium transistors for high-gain audio amplifier and switching applications. MAXIMUM RATING.PGE60830 - EDFA Gain Block for DWDM Applications
PGE 608 30 EDFA Gain Block for DWDM Applications Key Features • Operating wavelength window: 1540-1560 nm • Operating temperature range: -5 °C to 70 .2N1193 - PNPgermanium transistors
2N1191 thru 2N1194 (GERMANIUM) All leads isolated PNPgermanium transistors for high-gain audio amplifier and switching applications. MAXIMUM RATING.DPGEW1S09H - Low-Cost High-Power Laser-Diode
DATASHEET Photon Detection PGEW Series of Single- and Multi-epi 905 nm Pulsed Semiconductor Lasers Low-Cost High-Power Laser-Diode Family The PGEW Se.PGE60816 - EDFA Gain Block for DWDM Applications
PGE 608 16 EDFA Gain Block for DWDM Applications Key Features • Operating wavelength window: 1543-1558 nm • Gain flatness < ± 0.5dB • Low noise figur.2N1192 - PNPgermanium transistors
2N1191 thru 2N1194 (GERMANIUM) All leads isolated PNPgermanium transistors for high-gain audio amplifier and switching applications. MAXIMUM RATING.2N1190 - PNPgermanium transistors
2Nl189 2Nl190(GERMANIUM) CASE31{l) ' \ (TO·5) All leads isolated PNPgermanium transistors for high-gain audio amplifier and switching applications.·.2N1189 - PNPgermanium transistors
2Nl189 2Nl190(GERMANIUM) CASE31{l) ' \ (TO·5) All leads isolated PNPgermanium transistors for high-gain audio amplifier and switching applications.·.2N1194 - PNPgermanium transistors
2N1191 thru 2N1194 (GERMANIUM) All leads isolated PNPgermanium transistors for high-gain audio amplifier and switching applications. MAXIMUM RATING.TLPGE262 - T-1 InGaAIP Ultra Bright LED
GREEN TOSHIBA T-1 InGaAIP Ultra Bright LED TLPGE262 Pr oduct F ea tur es Product Fea eatur tures • InGaAlP Technology • 3mm Diameter T-1 Package • H.PGE60821 - EDFA Gain Block for DWDM Applications
PGE 608 21 EDFA Gain Block for DWDM Applications Key Features • Full C-band EDFA (1530-1563 nm) • +20 dBm output power using 3 pumps • Single pumped.TLPGE159P - T-1 3/4 InGaAIP Ultra Bright LED
GREEN TOSHIBA T-1¾ InGaAIP Ultra Bright LED TLPGE159P Pr oduct F ea tur es Product Fea eatur tures • InGaAlP Technology • 5mm Diameter T-1¾ Package .TLPGE183P - T-1 3/4 InGaAIP Ultra Bright LED
GREEN TOSHIBA T-1¾ InGaAIP Ultra Bright LED TLPGE183P Pr oduct F ea tur es Product Fea eatur tures • InGaAlP Technology • 5mm Diameter T-1¾ Package .TLPGE18TP - T-1 3/4 InGaAIP Ultra Bright LED
GREEN TOSHIBA T-1¾ InGaAIP Ultra Bright LED TLPGE18TP Pr oduct F ea tur es Product Fea eatur tures • InGaAlP Technology • 5mm Diameter T-1¾ Package .QPGEW1S09H - Low-Cost High-Power Laser-Diode
DATASHEET Photon Detection PGEW Series of Single- and Multi-epi 905 nm Pulsed Semiconductor Lasers Low-Cost High-Power Laser-Diode Family The PGEW Se.PGEW1S03H - Low-Cost High-Power Laser-Diode
DATASHEET Photon Detection PGEW Series of Single- and Multi-epi 905 nm Pulsed Semiconductor Lasers Low-Cost High-Power Laser-Diode Family The PGEW Se.QPGEW1S03H - Low-Cost High-Power Laser-Diode
DATASHEET Photon Detection PGEW Series of Single- and Multi-epi 905 nm Pulsed Semiconductor Lasers Low-Cost High-Power Laser-Diode Family The PGEW Se.TM4C123BH6PGE - Microcontroller
TEXAS INSTRUMENTS-PRODUCTION DATA Tiva™ TM4C123BH6PGE Microcontroller DATA SHEET DS-TM4C123BH6PGE-15842.2741 SPMS367E Copyright © 2007-2014 Te xa s.TM4C1237H6PGE - Microcontroller
TEXAS INSTRUMENTS-PRODUCTION DATA Tiva™ TM4C1237H6PGE Microcontroller DATA SHEET DS-TM4C1237H6PGE-15842.2741 SPMS360E Copyright © 2007-2014 Te xa s.