PHOTOINTERRUPTER Datasheet | Specifications & PDF Download

SLOTTED PHOTOINTERRUPTER Description The MIT-5A116-U consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in

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SLOTTED PHOTOINTERRUPTER Description The MIT-5A11B consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a

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GP1A05/GP1A22LC/GP1A23LC/GP1A25LC GP1A05/GP1A22LC/ GP1A23LC/GP1A25LC s Features 1. Uses 3-pin connector terminal 2. High sensing accuracy ( Slit widt

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TOSHIBA Photocoupler IRED & Photo−IC TLP109 Programmable Controllers Industrial Inverters Switching Power Supplies TLP109 Unit: mm The Toshiba TLP10

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SUBMINIATURE PHOTOINTERRUPTER Description The MIT-4A11B consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor , dou

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www.DataSheet4U.com GP1A36RA/GP1A36RB OPIC Photointerrupter with Encoder Function Features (1) Linear encoder for reading linear scale (2) High sensi

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Photointerrupter Product Data Sheet LTH-301-32 Spec No.: DS-55-96-0005 Effective Date: 07/23/2011 Revision: C LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE

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SLOTTED PHOTOINTERRUPTER Description The MIT-5A117 consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a

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Reflective Photointerrupters LTH-209-01/LTH-1550-01/LTH-1650-01 Features Non-contact switching. For direct PC board or dual-in-line socket mounting. F

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Photointerrupter Product Data Sheet LTH-306-02 Spec No.: DS-55-93-0004 Effective Date: 08/05/2002 Revision: A LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE

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Photointerrupter Product Data Sheet LTH-301-19 Spec No.: DS-55-92-0005 Effective Date: 08/23/2002 Revision: A LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE

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Photointerrupter Product Data Sheet LTH-301-05 Spec No.: DS-55-92-0002 Effective Date: 06/29/2000 Revision: - LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE

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フォトインタラプタ PHOTOINTERRUPTER SG240 DIMENSIONS （Unit : mm） Optical Center　 13.7±0.3 5+-00..21 5.15　-00.15 Collector Cathode Emitter Anode TOP

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GP1A74A/GP1A74A1 GP1A74A/GP1A74A1 s Features 1. Compact type 2. TTL compatible owing to OPIC output 3. Snap-in mounting type 4. 3 kinds of mounting p

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SUBMINIATURE PHOTOINTERRUPTER Description The MIT-4A11A consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor , dou

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GP2L22 GP2L22 s Features 1. φ 4mm compact resin mold type 2. High sensitivity ( IC : MIN. 0.5mA at I F = 4mA ) 3. Optimum detection distance: 0.6mm 4

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SLOTTED PHOTOINTERRUPTER Description The MIT-5A116 consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a

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SLOTTED PHOTOINTERRUPTER Description The MIT-5A11J consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a

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