PM2.5 Datasheet | Specifications & PDF Download

TPM2003 40-V 7-Ch Low-side Driver Array Features Description • 7-channel Darlington Array • 500-mA Rated Drain Current (Per Channel) • Very Low Out

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TPM2015Q Automotive Single-Channel Ultra-Highspeed GaN Predriver Features Description • AEC-Q100 Grade-1 Qualified (TPM2015Q Only) • 5-V Single Sup

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TPM2025 / TPM2025Q Automotive Dual-Channel Ultra-Highspeed GaN Predriver Features ⚫ AEC-Q100 Grade-1 Qualified (TPM2025Q Only) ⚫ Dual Independent Cha

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TPM2025 / TPM2025Q Automotive Dual-Channel Ultra-Highspeed GaN Predriver Features ⚫ AEC-Q100 Grade-1 Qualified (TPM2025Q Only) ⚫ Dual Independent Cha

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TPM27224 Dual 2-A High-Speed, Low-Side Gate Driver Features Description • Industry-Standard Pin-out • 4.5-V to 23-V Single-Supply Range • Dual Inde

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512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface Pm25LD512/010/ 020 FEATURES • Single

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512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface Pm25LD512/010/ 020 FEATURES • Single

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APM2556NU N-Channel Enhancement Mode MOSFET Features • 25V/60A, RDS(ON)=4.5mΩ (typ.) @ VGS=10V RDS(ON)=7.5mΩ (typ.) @ VGS=4.5V Pin Description G D

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Model No. TPM215HW01-HGEL03 (Rev : C1B) Doc. NO.： Version： Page： V00 1 / 23 Top Victory Electronics CO., LTD TFT LCD Approval Specification Model

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Pm25LQ512B Pm25LQ010B Pm25LQ020B Pm25LQ040B 512K/1M/2M/4MBIT 3V QUAD SERIAL FLASH MEMORY WITH MULTI-I/O SPI DATA SHEET 512K/1M/2M/4MBIT 3V QUAD SERIA

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APM2510NU N-Channel Enhancement Mode MOSFET Features • 25V/50A, RDS(ON)=8.5mΩ (typ.) @ VGS=10V RDS(ON)=15mΩ (typ.) @ VGS=4.5V G D S Pin Description

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Stepping Motor PM TYPE 55SPM25 Standard Dimensions(mm) 79.3 66.7 2.2 26.1MAX t1.6 B11.13 .25 G 14 ) R2 14.2 5.85 Shaft Length (m m ) Lead Wi

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512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface Pm25LD512/010/ 020 FEATURES • Single

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PMC Pm25LV512 / Pm25LV010 512 Kbit / 1 Mbit 3.0 Volt-only, Serial Flash Memory With 25 MHz SPI Bus Interface FEATURES • Single Power Supply Operatio

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FEATURES • Single Power Supply Operation - Low voltage range: 2.3 V - 3.6 V • Memory Organization - Pm25LD040: 512K x 8 (4 Mbit) • Cost Effective Sect

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APM2605C ® P-Channel Enhancement Mode MOSFET Features Pin Description • -30V/-4.5A, RDS(ON)=43mΩ(typ.) @ VGS=-10V RDS(ON)=60mΩ(typ.) @ VGS=-4.5V •

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SMT Power Inductors High Current Composite Inductor - PA5003.XXXNLT and PM2203.XXXNLT Height: 3.1mm Max Footprint: 5.7mm x 5.5mm Max Current Rating:

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APM2014N N-Channel Enhancement Mode MOSFET Features • • • • 20V/30A , RDS(ON)=12mΩ(typ.) @ VGS=4.5V RDS(ON)=18mΩ(typ.) @ VGS=2.5V Super High Dense Ce

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Pm25LQ512B Pm25LQ010B Pm25LQ020B Pm25LQ040B 512K/1M/2M/4MBIT 3V QUAD SERIAL FLASH MEMORY WITH MULTI-I/O SPI DATA SHEET 512K/1M/2M/4MBIT 3V QUAD SERIA

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A Division of Richardson Electronics PM 2105 DATA SHEET www.rfpowernet.com • ssc@rell.com • (800) 737-6937 • 630-208-2200 • Fax: 630-208-2550 Richar

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