.
SeCoS
PCR406 - Silicon Planar PNPN Thyristors
Elektronische Bauelemente PCR406 / PCR606 Silicon Planar PNPN Thyristors RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free MAIN.
HAOCHANG
PCR606 - Silicon Planar pnpn Thyristor
SHENZHEN HAOCHANG SEMICONDUCTOR CO.,LTD. TO-92 Plastic-Encapsulate Thyristors PCR606 Silicon Planar pnpn Thyristor TO-92 MAIN FEATURES Symbol v .
ETC
1N5158 - PNPN 4-LAYER DIODES
1N5158 thru 1N5160 1N5779 thru 1N5793 PNPN 4-LAYER DIODES · .. two terminal, fast·switching devices specifically designed for low voltage application.
Motorola
2N2322 - All-diffused PNPN thyristors
2N2303 (SILICON) For Specifications, See 2N722 Data. 2N2322 thru 2N2326 {SILICON} All-diffused PNPN thyristors designed for gating operation in rnAI .
ETC
1N5793 - PNPN 4-LAYER DIODES
1N5158 thru 1N5160 1N5779 thru 1N5793 PNPN 4-LAYER DIODES · .. two terminal, fast·switching devices specifically designed for low voltage application.
ETC
1N5781 - PNPN 4-LAYER DIODES
1N5158 thru 1N5160 1N5779 thru 1N5793 PNPN 4-LAYER DIODES · .. two terminal, fast·switching devices specifically designed for low voltage application.
Motorola
2N2326 - All-diffused PNPN thyristors
2N2303 (SILICON) For Specifications, See 2N722 Data. 2N2322 thru 2N2326 {SILICON} All-diffused PNPN thyristors designed for gating operation in rnAI .
Motorola
2N2323 - All-diffused PNPN thyristors
2N2303 (SILICON) For Specifications, See 2N722 Data. 2N2322 thru 2N2326 {SILICON} All-diffused PNPN thyristors designed for gating operation in rnAI .
ETC
1N5160 - PNPN 4-LAYER DIODES
1N5158 thru 1N5160 1N5779 thru 1N5793 PNPN 4-LAYER DIODES · .. two terminal, fast·switching devices specifically designed for low voltage application.
Motorola
2N4212 - PNPN thyristors
2N4212 thru 2N4216 (SILICON) CASE 31(2) (TO-S) PNPN thyristors (silicon controlled rectifiers) designed for operation in mAlf.lA signal or detection.
First Silicon
TYN610 - PNPN Thyristor
SEMICONDUCTOR TECHNICAL DATA Silicon Planar PNPN Thyristor (10A SCR) MAIN FEATURES Symbol IT(RMS) VDRM/VRRM ITSM value 10 600 100 unit A V A GENE.
Motorola
2N2324 - All-diffused PNPN thyristors
2N2303 (SILICON) For Specifications, See 2N722 Data. 2N2322 thru 2N2326 {SILICON} All-diffused PNPN thyristors designed for gating operation in rnAI .
ETC
1N5792 - PNPN 4-LAYER DIODES
1N5158 thru 1N5160 1N5779 thru 1N5793 PNPN 4-LAYER DIODES · .. two terminal, fast·switching devices specifically designed for low voltage application.
ETC
1N5791 - PNPN 4-LAYER DIODES
1N5158 thru 1N5160 1N5779 thru 1N5793 PNPN 4-LAYER DIODES · .. two terminal, fast·switching devices specifically designed for low voltage application.
ETC
1N5785 - PNPN 4-LAYER DIODES
1N5158 thru 1N5160 1N5779 thru 1N5793 PNPN 4-LAYER DIODES · .. two terminal, fast·switching devices specifically designed for low voltage application.
