PT501/PT510 PT501/PT510 s Features 1. Narrow acce.
PT501 - TO-18 Type Narrow Acceptance Phototransistor
PT501/PT510 PT501/PT510 s Features 1. Narrow acceptance ( ∆θ : TYP. ± 6˚ ) 2. TO -18 type standard package 3. With base terminal : PT510 TO-18 Type .APT5010LLL - Power MOSFET
500V 46A 0.100W APT5010B2LL APT5010LLL B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po.APT5010LLC - high voltage N-Channel enhancement mode power MOSFET
APT5010B2LC APT5010LLC 500V 47A 0.100W POWER MOS VITM B2LC Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancemen.APT5014SLL - Power MOSFET
APT5014BLL APT5014SLL 500V 35A 0.140Ω POWER MOS 7 R MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode p.APT5015SVFR - Power MOSFET
APT5015BVFR APT5015SVFR 500V 32A 0.150Ω POWER MOS V ® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFE.APT5015BVFR - N-Channel MOSFET
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=32A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : .APT5015BVFR - Power MOSFET
APT5015BVFR APT5015SVFR 500V 32A 0.150Ω POWER MOS V ® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFE.APT5010B2FLL - Power MOSFET
APT5010B2FLL APT5010LFLL 500V 46A 0.100Ω POWER MOS 7 R FREDFET B2FLL Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhance.APT5010B2LC - high voltage N-Channel enhancement mode power MOSFET
APT5010B2LC APT5010LLC 500V 47A 0.100W POWER MOS VITM B2LC Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancemen.APT5010B2LL - Power MOSFET
500V 46A 0.100W APT5010B2LL APT5010LLL B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po.APT5010B2VFR - Power MOSFET
APT5010B2VFR 500V 47A 0.100Ω POWER MOS V ® FREDFET T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs.APT5010B2VR - Power MOSFET
APT5010B2VR 500V 47A 0.100Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technol.APT5010JFLL - Power MOSFET
APT5010JFLL 500V 44A S G D 0.100W S POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode .APT5010JLC - Power MOSFET
APT5010JLC 500V 44A 0.100 W S G D S POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode pow.APT5010JLL - Power MOSFET
APT5010JLL 500V 44A 0.100 W S G D S POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFE.APT5010JVFR - Power MOSFET
APT5010JVFR 500V 44A 0.100Ω S G D S POWER MOS V ® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs.APT5010JVR - Power MOSFET
APT5010JVR 500V 44A 0.100Ω S G D S POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new .APT5010JVRU3 - Power MOSFET
APT5010JVRU3 500V 44A 0.100Ω S G D A POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This ne.APT5014B2LC - Power MOSFET
APT5014B2LC APT5014LLC 500V 37A 0.140W B2LC POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement .APT5014B2VR - Power MOSFET
APT5014B2VR 500V 37A 0.140Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technol.