PT501 Datasheet | Specifications & PDF Download

APT5014B2LC APT5014LLC 500V 37A 0.140W B2LC POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement

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APT5010JVR 500V 44A 0.100Ω S G D S POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new

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APT5010LVR 500V 47A 0.100Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technolo

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APT5014B2VR 500V 37A 0.140Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technol

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APT5015BLC 500V 32A 0.150 W POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFE

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APT5016BFLL APT5016SFLL 500V 30A 0.160Ω POWER MOS 7 R FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mod

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=30A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance :

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500V 46A 0.100W APT5010B2LL APT5010LLL B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po

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APT5018BFLL APT5018SFLL 500V 27A 0.180W BLL D3PAK TO-247 POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Chann

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APT5015BVFR APT5015SVFR 500V 32A 0.150Ω POWER MOS V ® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFE

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=32A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance :

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=35A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance :

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APT5010LVFR 500V 47A 0.100Ω POWER MOS V ® FREDFET TO-264 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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APT5017BVFR 500V 30A 0.170Ω POWER MOS V ® FREDFET TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=46A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance :

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APT5014LVR 500V 37A 0.140Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technolo

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500V 30A 0.160W APT5016BLL APT5016SLL BLL D3PAK TO-247 POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancem

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APT5010B2FLL APT5010LFLL 500V 46A 0.100Ω POWER MOS 7 R FREDFET B2FLL Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhance

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APT5016BFLL APT5016SFLL 500V 30A 0.160Ω POWER MOS 7 R FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mod

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