PT6010 Datasheet | Specifications & PDF Download

8～10 / PT6010 PT6010 PT6010 8～10 /  ： 、，  ： ，，/ VCOV = 4.25V/3.85V/3.65V/2.80V 。 ：±25mV  ： ±25mV VCOVR = 4.15V/3.65V/3.55V/2.5V 。±10

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 54A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance :

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APT6010JLL 600V 47A 0.100W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 54A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance :

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600V 54A 0.100Ω APT6010B2FLL APT6010LFLL APT6010B2FLL* APT6010LFLLG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 R FREDFET B2FLL

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600V 54A 0.100Ω APT6010B2FLL APT6010LFLL APT6010B2FLL* APT6010LFLLG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 R FREDFET B2FLL

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600V 54A 0.100W APT6010B2LL APT6010LLL B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po

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isc N-Channel MOSFET Transistor APT6010B2FLL FEATURES ·Drain Current –ID= 54A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source O

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600V 54A 0.100Ω APT6010B2FLL APT6010LFLL APT6010B2FLL* APT6010LFLLG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 R FREDFET B2FLL

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600V 54A 0.100W APT6010B2LL APT6010LLL B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po

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APT6010JFLL 600V 47A 0.100W POWER MOS 7TM FREDFET S G D S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode p

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