.
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SI2310 - N-channel MOSFET
SI2310 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@4.5V, Ids@5.0A < 28mΩ RDS(ON) Vgs@2 5V, Ids@4 5A < 35mΩ Features Advanced trench p.
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SI2333 - P-ChannelEnhancement Mode Power MOSFET
SI2333 P-ChannelEnhancement Mode Power MOSFET General Features ● VDS = -12V,ID = -6A RDS(ON) < 45mΩ @ VGS=-2.5V RDS(ON) < 30mΩ @ VGS=-4.5V ● High powe.
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SI2307 - -30V P-Channel Enhancement Mode MOSFET
SI2307 -30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@ -4.1A < 64.5mΩ RDS(ON), Vgs@-4.5V, Ids@-3.0A < 87m Ω Features Advance.
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SI2304 - 30V N-Channel Enhancement Mode MOSFET
SI2304 30V N-Channel Enhancement Mode MOSFET VDS= 30V RDS(ON), Vgs@ 10V, Ids@ 3.5A RDS(ON), Vgs@ 4.5V, Ids@ 2.8A 70m Ω 80mΩ Features Advanced tren.
