FEATURES Access Times of 150, 200, 250 and 350ns .
PYA28C64 - EEPROM
FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Fast Byte Write (200µs or 1 ms) Low Power CMOS: - 60 mA Active Cur.PYA28C64B - STATIC CMOS RAM
FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 40 mA Active Current .