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BC547C - NPN Transistor
BC546,BC547,BC548 SERIES NPN GENERAL PURPOSE TRANSISTOR VOLTAGE 30V/45V/65V POWER 625 mWatts FEATURES • NPN epitaxial silicon, planar design • Collect.PJT7838 - 50V N-Channel MOSFET
PPJT7838 50V N-Channel Enhancement Mode MOSFET Voltage 50 V Current 400mA Features RDS(ON) , VGS@10V, ID@500mA<1.45Ω RDS(ON) , VGS@4.5V, ID@.F12N65 - 650V N-CHANNEL MOSFET
PJP12N65 / PJF12N65 650V N-Channel Enhancement Mode MOSFET FEATURES • 12A , 650V, RDS(ON)=0.8Ω@VGS=10V, ID=6.0A TO-220AB / ITO-220AB TO-220AB • Low.MBR5H150SS - ULTRA LOW IR SCHOTTKY BARRIER RECTIFIERS
PMBR5H150SS \ SR5H15 ULTRA LOW IR SCHOTTKY BARRIER RECTIFIERS Voltage 150 V Current 5A Features Plastic package has Underwriters Laboratory Fl.UF3010 - ULTRAFAST SWITCHING RECTIFIER
UF300 THRU UF3010 ULTRAFAST SWITCHING RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes FEATURES l Plastic package has Underwriters Laborator.UF208 - ULTRAFAST SWITCHING RECTIFIER
UF200 THRU UF2010 ULTRAFAST SWITCHING RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 2.0 Amperes FEATURES l Plastic package has Underwriters Laborator.UF2010 - ULTRAFAST SWITCHING RECTIFIER
UF200 THRU UF2010 ULTRAFAST SWITCHING RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 2.0 Amperes FEATURES l Plastic package has Underwriters Laborator.AZ23C2V7 - DUAL SURFACE MOUNT ZENER DIODES
AZ23C2V4 SERIES DUAL SURFACE MOUNT ZENER DIODES VOLTAGE 2.4 to 51 Volts POWER 300 mWatts FEATURES • Dual Zeners in Common Anode Configuration • 300mW .MBR20100CT - 20 AMPERES SCHOTTKY BARRIER RECTIFIERS
DATA SHEET MBR2020CT~MBR20100CT 20 AMPERES SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 100 Volts CURRENT 20 Amperes FEATURES • Plastic package has Unde.UF1010 - (UF100 - UF1010) ULTRAFAST SWITCHING RECTIFIER
UF100 THRU UF1010 ULTRAFAST SWITCHING RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere FEATURES l Plastic package has Underwriters Laboratory.SBU6D - (SBU6x) SILICON SINGLE-PHASE BRIDGE RECTIFIER
SBU6A~SBU6M SILICON SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE FEATURES • Plastic material has Underwriters Laboratory Flammability Classification 94V-O • .PJ4N3KDW - 30V Dual N-Channel MOSFET
PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@2.5V,IDS@1mA=7.0Ω • RDS(ON), VGS@4.0V,IDS@10mA=5.0Ω • Adva.F8N60 - PJF8N60
PJP8N60 / PJF8N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 8A , 600V, R DS(ON)=1.2Ω@VGS=10V, ID=4.0A • • • • • • Low ON Resistance Fast Switc.1.5KE56CA - GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
1.5KE SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR PEAK PULSE POWER 1500 Watts BREAK DOWN VOLTAGE 6.8 to 440 Volts Recongnized Fi.PJD10P10A - 100V P-Channel Enhancement Mode MOSFET
PPJD10P10A 100V P-Channel Enhancement Mode MOSFET Voltage -100 V Current -10 A Features RDS(ON), VGS@-10V,ID@-5A<210mΩ RDS(ON), VGS@-4.5V,ID@-.BC548A - NPN Transistor
BC546,BC547,BC548 SERIES NPN GENERAL PURPOSE TRANSISTOR VOLTAGE 30V/45V/65V POWER 625 mWatts FEATURES • NPN epitaxial silicon, planar design • Collect.BC548B - NPN Transistor
BC546,BC547,BC548 SERIES NPN GENERAL PURPOSE TRANSISTOR VOLTAGE 30V/45V/65V POWER 625 mWatts FEATURES • NPN epitaxial silicon, planar design • Collect.MMBT5551 - NPN HIGH VOLTAGE TRANSISTOR
MMBT5551 NPN HIGH VOLTAGE TRANSISTOR VOLTAGE 160 Volts POWER 250 mWatts FEATURES • NPN Silicon, planar design • Collector-emitter voltage VCE = 160V •.BD560T - SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
PRELIMINARY BD540T~BD5200T SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts CURRENT 5 Amperes FEATURES • Plastic package has Underwr.1.00E+01 - SUPERFAST RECOVERY RECTIFIERS
1E1 THRU 1E5 SUPERFAST RECOVERY RECTIFIERS VOLTAGE - 50 to 600 Volts CURRENT - 1.0 Ampere FEATURES l Superfast recovery times-epitaxial construction l.