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BC547C - NPN Transistor
BC546,BC547,BC548 SERIES NPN GENERAL PURPOSE TRANSISTOR VOLTAGE 30V/45V/65V POWER 625 mWatts FEATURES • NPN epitaxial silicon, planar design • Collect.F8N60 - PJF8N60
PJP8N60 / PJF8N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 8A , 600V, R DS(ON)=1.2Ω@VGS=10V, ID=4.0A • • • • • • Low ON Resistance Fast Switc.UF302 - ULTRAFAST SWITCHING RECTIFIER
UF300 THRU UF3010 ULTRAFAST SWITCHING RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes FEATURES l Plastic package has Underwriters Laborator.UF3010 - ULTRAFAST SWITCHING RECTIFIER
UF300 THRU UF3010 ULTRAFAST SWITCHING RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes FEATURES l Plastic package has Underwriters Laborator.PJ4N3KDW - 30V Dual N-Channel MOSFET
PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@2.5V,IDS@1mA=7.0Ω • RDS(ON), VGS@4.0V,IDS@10mA=5.0Ω • Adva.PJT7838 - 50V N-Channel MOSFET
PPJT7838 50V N-Channel Enhancement Mode MOSFET Voltage 50 V Current 400mA Features RDS(ON) , VGS@10V, ID@500mA<1.45Ω RDS(ON) , VGS@4.5V, ID@.MBR5H150SS - ULTRA LOW IR SCHOTTKY BARRIER RECTIFIERS
PMBR5H150SS \ SR5H15 ULTRA LOW IR SCHOTTKY BARRIER RECTIFIERS Voltage 150 V Current 5A Features Plastic package has Underwriters Laboratory Fl.F12N65 - 650V N-CHANNEL MOSFET
PJP12N65 / PJF12N65 650V N-Channel Enhancement Mode MOSFET FEATURES • 12A , 650V, RDS(ON)=0.8Ω@VGS=10V, ID=6.0A TO-220AB / ITO-220AB TO-220AB • Low.MBR20100CT - 20 AMPERES SCHOTTKY BARRIER RECTIFIERS
DATA SHEET MBR2020CT~MBR20100CT 20 AMPERES SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 100 Volts CURRENT 20 Amperes FEATURES • Plastic package has Unde.PJD10P10A - 100V P-Channel Enhancement Mode MOSFET
PPJD10P10A 100V P-Channel Enhancement Mode MOSFET Voltage -100 V Current -10 A Features RDS(ON), VGS@-10V,ID@-5A<210mΩ RDS(ON), VGS@-4.5V,ID@-.BC546B - NPN Transistor
BC546,BC547,BC548 SERIES NPN GENERAL PURPOSE TRANSISTOR VOLTAGE 30V/45V/65V POWER 625 mWatts FEATURES • NPN epitaxial silicon, planar design • Collect.BC548B - NPN Transistor
BC546,BC547,BC548 SERIES NPN GENERAL PURPOSE TRANSISTOR VOLTAGE 30V/45V/65V POWER 625 mWatts FEATURES • NPN epitaxial silicon, planar design • Collect.UF1010 - (UF100 - UF1010) ULTRAFAST SWITCHING RECTIFIER
UF100 THRU UF1010 ULTRAFAST SWITCHING RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere FEATURES l Plastic package has Underwriters Laboratory.09N03 - PJD09N03
www.DataSheet.co.kr PJD09N03 25V N-Channel Enhancement Mode MOSFET TO-252 FEATURES • RDS(ON), VGS@10V,IDS@30A=9mΩ • RDS(ON), VGS@4.5V,IDS@30A=12mΩ •.1.5KE440A - GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
1.5KE SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR PEAK PULSE POWER 1500 Watts BREAK DOWN VOLTAGE 6.8 to 440 Volts Recongnized Fi.1N5822 - SCHOTTKY BARRIER RECTIFIERS
1N5820~1N5822 SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 40 Volts CURRENT 3.0 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammab.MBR2045CT - 20 AMPERES SCHOTTKY BARRIER RECTIFIERS
DATA SHEET MBR2020CT~MBR20100CT 20 AMPERES SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 100 Volts CURRENT 20 Amperes FEATURES • Plastic package has Unde.PS204 - PLASTIC SILICON RECTIFIER
DATA SHEET PS200~PS2010 PLASTIC SILICON RECTIFIER VOLTAGE 50 to 1000 Volts CURRENT - 2.0 Amperes FEATURES • Low cost • High current capability • Plast.PJP6000 - 60V N-Channel Enhancement Mode MOSFET
PJP6000 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@30A=14mΩ • Advanced Trench Process Technology • High Density Cell Design.1.5KE12A - GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
1.5KE SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR PEAK PULSE POWER 1500 Watts BREAK DOWN VOLTAGE 6.8 to 440 Volts Recongnized Fi.