| Part Number | Description | Manufacture |
|---|---|---|
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Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) , f = 1 GHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group 2 Sep-11-1996 BBY 53-03W Diode capacitance CT = f (VR) f = 1MHz 6 pF CT 4 3 2 1 0 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 V VR 3.0 Package Semico |
 Siemens Semiconductor Group |
