R514 Datasheet | Specifications & PDF Download

2SCR514P Middle Power Transistors (80V / 700mA) Parameter VCEO IC Value 80V 0.7A lFeatures 1)Low saturation voltage, typically 　VCE(sat)=300mV (Max

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2SAR514P FRA Middle Power Transistor (-80V / -0.7A) Parameter VCEO IC Value -80V -0.7A lFeatures 1)Low saturation voltage 　VCE(sat) =-400mV (Max.)

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2SCR514P HZG Middle Power Transistor (80V / 0.7A) Datasheet Parameter VCEO IC Value 80V 0.7A lFeatures 1)Low saturation voltage 　VCE(sat)=300mV (M

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2SAR514P5 Middle Power Transistors (-80V / -0.7V) Parameter VCEO IC Value -80V -0.7A lFeatures 1)Low saturation voltage, typically 　VCE(sat) =-400m

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2SCR514R NPN 0.7A 80V Middle Power Transistor Parameter VCEO IC Value 80V 0.7A lFeatures 1)Suitable for Middle Power Driver 2)Complementary PNP Typ

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NotNeRewcDoemsimgennsded for 2SAR514P PNP -0.7A -80V Middle Power Transistor Datasheet Parameter VCEO IC Value -80V -0.7A lFeatures 1) Suitable f

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2SCR514P5 Middle Power Transistors (80V / 700mA) Parameter VCEO IC Value 80V 0.7A lFeatures 1)Low saturation voltage, typically 　VCE(sat)=300mV (Ma

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Midium Power Transistors (-80V / -0.7A) 2SAR514R  Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -300mA / -15mA) 2

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2SCR514P FRA Middle Power Transistor (80V / 0.7A) Parameter VCEO IC Value 80V 0.7A lFeatures 1)Low saturation voltage, typically 　VCE(sat)=300mV (M

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HVR512 - HVR520 PRV : 1200 - 2000 Volts Io : 5.0 Amperes FEATURES : * * * * * High current capability High surge current capability High reliability L

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