R542 Datasheet | Specifications & PDF Download

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PRELIMINARY ’99.12.9 Li-Ion BATTERY PROTECTOR R5422NxxxC/xxxE series n OUTLINE The R5422NxxxC/E Series are protection ICs for over-charge/discharge

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DATASHEET ISL12022MR5421 Low Power RTC with Battery Backed SRAM, Integrated ±5ppm Temperature Compensation and Auto Daylight Saving FN7576 Rev 3.00

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PRELIMINARY ’99.12.9 Li-Ion BATTERY PROTECTOR R5422NxxxC/xxxE series n OUTLINE The R5422NxxxC/E Series are protection ICs for over-charge/discharge

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Midium Power Transistors (-30V / -5A) 2SAR542P  Structure PNP Silicon epitaxial planar transistor  Features 1) Low saturation voltage, typically V

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2SCR542F3 NPN 3.0A 30V Middle Power Transistor Parameter VCEO IC Value 30V 3A lFeatures 1) Suitable for Middle Power Driver. 2) Low VCE(sat) 　　VCE(

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PRELIMINARY ’99.12.9 Li-Ion BATTERY PROTECTOR R5422NxxxC/xxxE series n OUTLINE The R5422NxxxC/E Series are protection ICs for over-charge/discharge

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isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain hFE :200-500@ IC= 0.5A ·Collector-Emitter Breakdown Voltage : V(BR) CEO= 30V(Min) ·Min

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PRELIMINARY ’99.12.9 Li-Ion BATTERY PROTECTOR R5422NxxxC/xxxE series n OUTLINE The R5422NxxxC/E Series are protection ICs for over-charge/discharge

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2SCR542P Midium Power Transistors (30V / 5A) Parameter VCEO IC Value 30V 5A lFeatures 1)Low saturation voltage,typically 　VCE(sat)=400mV(Max.) 　(IC

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Midium Power Transistors (30V / 5A) 2SCR542D  Structure NPN Silicon epitaxial planar transistor  Features 1) Low saturation voltage VCE (sat) = 0.4

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Semiconductor SUR542EF Epitaxial Planar Type NPN Silicon Transistor Descriptions • Digital transistor Features • Two SRC1207 chips in SOT-563F pack

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2SAR542F3 PNP -3.0A -30V Middle Power Transistor Parameter VCEO IC Value -30V -3A lFeatures 1) Suitable for Middle Power Driver. 2) Low VCE(sat) 　　

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