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R542 datasheet

R542 datasheet

R542 Output Units

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ROHM

2SCR542F3 - Middle Power Transistors

2SCR542F3 NPN 3.0A 30V Middle Power Transistor Parameter VCEO IC Value 30V 3A lFeatures 1) Suitable for Middle Power Driver. 2) Low VCE(sat)   VCE(.
1.0 · rating-1
RICOH

R5421N112C - Li-Ion BATTERY PROTECTOR

Li-Ion BATTERY PROTECTOR 51[[[&[[[) 6(5,(6 NO. EA-069-0204 OUTLINE 7KH 51[[[&) 6HULHV DUH SURWHFWLRQ ,&V IRU RYHUFKDUJHGLVFKDUJH RI UHF.
1.0 · rating-1
ROHM

2SCR542P - Middle Power Transistors

2SCR542P Midium Power Transistors (30V / 5A) Parameter VCEO IC Value 30V 5A lFeatures 1)Low saturation voltage,typically  VCE(sat)=400mV(Max.)  (IC.
1.0 · rating-1
ROHM

2SCR542PFRA - NPN Transistor

22SSCCRR554422PPFRA NPN 5.0A 30V Middle Power Transistor Parameter VCEO IC Value 30V 5.0A lFeatures 1) Suitable for Middle Power Driver 2) Compleme.
1.0 · rating-1
ROHM

2SCR542D - Midium Power Transistors

Midium Power Transistors (30V / 5A) 2SCR542D  Structure NPN Silicon epitaxial planar transistor  Features 1) Low saturation voltage VCE (sat) = 0.4.
1.0 · rating-1
Rohm

2SAR542D - Midium Power Transistors

Midium Power Transistors (-30V / -5A) 2SAR542D  Structure PNP Silicon epitaxial planar transistor  Features 1) Low saturation voltage VCE (sat) = -.
1.0 · rating-1
Rohm

2SAR542F3 - PNP -3.0A -30V Middle Power Transistor

2SAR542F3 PNP -3.0A -30V Middle Power Transistor Parameter VCEO IC Value -30V -3A lFeatures 1) Suitable for Middle Power Driver. 2) Low VCE(sat)   .
1.0 · rating-1
Rohm

2SAR542P - Midium Power Transistors

Midium Power Transistors (-30V / -5A) 2SAR542P  Structure PNP Silicon epitaxial planar transistor  Features 1) Low saturation voltage, typically V.
1.0 · rating-1
RICOH

R5421N151F - Li-Ion BATTERY PROTECTOR

Li-Ion BATTERY PROTECTOR 51[[[&[[[) 6(5,(6 NO. EA-069-0204 OUTLINE 7KH 51[[[&) 6HULHV DUH SURWHFWLRQ ,&V IRU RYHUFKDUJHGLVFKDUJH RI UHF.
1.0 · rating-1
RICOH

R5421N111C - Li-Ion BATTERY PROTECTOR

Li-Ion BATTERY PROTECTOR 51[[[&[[[) 6(5,(6 NO. EA-069-0204 OUTLINE 7KH 51[[[&) 6HULHV DUH SURWHFWLRQ ,&V IRU RYHUFKDUJHGLVFKDUJH RI UHF.
1.0 · rating-1
RICOH

R5421N152F - Li-Ion BATTERY PROTECTOR

Li-Ion BATTERY PROTECTOR 51[[[&[[[) 6(5,(6 NO. EA-069-0204 OUTLINE 7KH 51[[[&) 6HULHV DUH SURWHFWLRQ ,&V IRU RYHUFKDUJHGLVFKDUJH RI UHF.
1.0 · rating-1
RICOH

R5422N111C - Li-Ion BATTERY PROTECTOR

PRELIMINARY ’99.12.9 Li-Ion BATTERY PROTECTOR R5422NxxxC/xxxE series n OUTLINE The R5422NxxxC/E Series are protection ICs for over-charge/discharge.
1.0 · rating-1
RICOH

R5422N112C - Li-Ion BATTERY PROTECTOR

PRELIMINARY ’99.12.9 Li-Ion BATTERY PROTECTOR R5422NxxxC/xxxE series n OUTLINE The R5422NxxxC/E Series are protection ICs for over-charge/discharge.
1.0 · rating-1
RICOH

R5422N112E - Li-Ion BATTERY PROTECTOR

PRELIMINARY ’99.12.9 Li-Ion BATTERY PROTECTOR R5422NxxxC/xxxE series n OUTLINE The R5422NxxxC/E Series are protection ICs for over-charge/discharge.
1.0 · rating-1
RICOH

R5422N111E - Li-Ion BATTERY PROTECTOR

PRELIMINARY ’99.12.9 Li-Ion BATTERY PROTECTOR R5422NxxxC/xxxE series n OUTLINE The R5422NxxxC/E Series are protection ICs for over-charge/discharge.
1.0 · rating-1
RICOH electronics devices division

R5426x102CA - LI-LON/POLYMER 1CELL PROTECTOR

LI-LON/POLYMER 1CELL PROTECTOR 5[[[[[ 6(5,(6 NO. EA-090-0204 OUTLINE 7KH 5[[[[[ 6HULHV DUH SURWHFWLRQ ,&V IRU RYHUFKDUJHGLVFKDUJH RI UHFK.
1.0 · rating-1
RICOH electronics devices division

R5426x104BB - LI-LON/POLYMER 1CELL PROTECTOR

LI-LON/POLYMER 1CELL PROTECTOR 5[[[[[ 6(5,(6 NO. EA-090-0204 OUTLINE 7KH 5[[[[[ 6HULHV DUH SURWHFWLRQ ,&V IRU RYHUFKDUJHGLVFKDUJH RI UHFK.
1.0 · rating-1
RICOH electronics devices division

R5426x113CA - LI-LON/POLYMER 1CELL PROTECTOR

LI-LON/POLYMER 1CELL PROTECTOR 5[[[[[ 6(5,(6 NO. EA-090-0204 OUTLINE 7KH 5[[[[[ 6HULHV DUH SURWHFWLRQ ,&V IRU RYHUFKDUJHGLVFKDUJH RI UHFK.
1.0 · rating-1
Densitron

LMR5428 - LCD Module

LIQUID CRYSTAL DISPLAY MODULE Product Specification PRODUCT NUMBER LMR5428 INTERNAL APPROVALS Product Manager Engineering Document Control Date.
1.0 · rating-1
Inchange Semiconductor

2SCR542D - Silicon NPN Power Transistors

isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain hFE :200-500@ IC= 0.5A ·Collector-Emitter Breakdown Voltage : V(BR) CEO= 30V(Min) ·Min.
1.0 · rating-1
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