R6002END3 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor R6002END3 FEATURES ·Drain Current –ID=1.7A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-R

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R6002END3 　　Nch 600V 2A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 3.4Ω ±1.7A 26W lFeatures 1) Low on-resistance 2) Fast switching 4) Drive circuit

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