R6004ENJ Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor R6004ENJ FEATURES ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Res

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R6004ENJ 　　Nch 600V 4A Power MOSFET 　　 Datasheet lOutline VDSS 600V TO-263S 　 RDS(on)(Max.) 0.98Ω SC-83 ID ±4.0A LPT(S) PD lFeatures 58W

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