R6004KNJ Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor R6004KNJ FEATURES ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Res

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R6004KNJ 　　Nch 600V 4A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.98Ω ±4.0A 58W lFeatures 1) Low on-resistance. 2) Ultra fast switching speed. 3)

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