R6006JNJ Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor R6006JNJ FEATURES ·Drain Current –ID=6A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resi

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R6006JNJ 　　Nch 600V 6A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.936Ω ±6A 86W lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistance

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