R6007JNJ Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor R6007JNJ FEATURES ·Drain Current –ID=7A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resi

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R6007JNJ 　　Nch 600V 7A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.780Ω ±7A 96W lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistance

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