R6504KNJ Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor R6504KNJ FEATURES ·Drain Current –ID= 4.0A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-R

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R6504KNJ 　　Nch 650V 4A Power MOSFET VDSS RDS(on)(Max.) ID PD 650V 1.050Ω ±4.0A 58W lFeatures 1) Low on-resistance 2) Ultra fast switching speed 3)

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