R6507ENJ Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor R6507ENJ FEATURES ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Res

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R6507ENJ 　　Nch 650V 7A Power MOSFET VDSS RDS(on)(Max.) ID PD 650V 0.665Ω ±7A 78W lFeatures 1) Low on-resistance 2) Fast switching speed 3) Parallel

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