R6520 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor R6520ENX FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Re

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isc N-Channel MOSFET Transistor R6520ENZ1 FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-R

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R6520ENX 　　Nch 650V 20A Power MOSFET 　　 Datasheet lOutline VDSS 650V 　 RDS(on)(Max.) 0.205Ω ID ±20A TO-220FM PD 68W 　 　　　　　　 lFeatures

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isc N-Channel MOSFET Transistor R6520ENJ FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Re

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isc N-Channel MOSFET Transistor R6520ENZ FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Re

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isc N-Channel MOSFET Transistor R6520KNX FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Re

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isc N-Channel MOSFET Transistor R6520KNZ1 FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-R

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R6520KNX3 Nch 650V 20A Power MOSFET VDSS RDS(on)(Max.) ID PD 650V 0.205Ω ±20A 220W lFeatures 1) Low on-resistance 2) Ultra Fast switching 3) Parall

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R6520KNZ4 　　Nch 650V 20A Power MOSFET VDSS RDS(on)(Max.) ID PD 650V 0.205Ω ±20A 231W lFeatures 1) Low on-resistance 2) Fast switching speed 3) Para

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isc N-Channel MOSFET Transistor R6520KNJ FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Re

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isc N-Channel MOSFET Transistor R6520KNX1 FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-R

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R6520KNJ 　　Nch 650V 20A Power MOSFET VDSS RDS(on)(Max.) ID PD 650V 0.205Ω ±20A 231W lFeatures 1) Low on-resistance 2) Ultra fast switching speed 3)

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isc N-Channel MOSFET Transistor R6520KNZ FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Re

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