R74 Datasheet | Specifications & PDF Download

MCC • • • •
     omponents 21201 Itasca Street Chatsworth  # $ % # MBR720 THRU MBR760 7.

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www.DataSheet4U.com PIC16CR7X Data Sheet 28/40-Pin, 8-Bit CMOS ROM Microcontrollers © 2007 Microchip Technology Inc. DS21993C www.DataSheet4U.com

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Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • Low forward volt drop • Fast switching • Reverse surge cap

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Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • Low forward volt drop • Fast switching • Reverse surge cap

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Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • Low forward volt drop • Fast switching • Reverse surge cap

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Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • Low forward volt drop • Fast switching • Reverse surge cap

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IRF740, SiHF740 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 63 9.0 32

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StrongIRFET™ IRFR7440PbF IRFU7440PbF Applications l Brushed Motor drive applications l BLDC Motor drive applications l PWM Inverterized topologies l B

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isc N-Channel MOSFET Transistor IRFR7440, IIRFR7440 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤2.4mΩ ·Enhancement mode: ·100% avalanche t

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Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION Low leakage, platinum barrier, schottky rectifier

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Schottky Barrier Rectifier INCHANGE Semiconductor MBR745 FEATURES ·Schottky Barrier Chip ·Guard Ring Die Construction for Transient Protection ·Low

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Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • Low forward volt drop • Fast switching • Reverse surge cap

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Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • Low forward volt drop • Fast switching • Reverse surge cap

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DL series | Features | • Snap-in type terminals • High energy and high power • Low temperature(-40℃) usage available for 2.7V products • High tempera

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Application ⚫ Brushed Motor drive applications ⚫ BLDC Motor drive applications ⚫ PWM Inverterized topologies ⚫ Battery powered circuits ⚫ Half-bridge

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Technical Data 4315 Effective September 2017 Supersedes April 2014 DR High power density, high efficiency, shielded drum core power inductors Produ

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StrongIRFET™ IRFR7446PbF Applications l Brushed Motor drive applications l BLDC Motor drive applications l PWM Inverterized topologies l Battery power

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BFR740L3RH Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 2.1, 2016-03-16 RF & Protection Devices Edition 2016-03-16 Published

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isc N-Channel MOSFET Transistor IRFR7446, IIRFR7446 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤3.9mΩ ·Enhancement mode: ·100% avalanche t

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