RA-51.8S Datasheet | Specifications & PDF Download

PRELIMINARY ISD5100 SERIES SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE RECORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CAPABILITY -1- Publication Rele

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PRELIMINARY ISD5100 SERIES SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE RECORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CAPABILITY -1- Publication Rele

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www.vishay.com SM8S10CA thru SM8S85CA Vishay General Semiconductor Surface-Mount PAR® Transient Voltage Suppressors High Temperature Stability and H

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www.DataSheet4U.com PRELIMINARY CYD01S36V CYD02S36V/CYD04S36V CYD09S36V/CYD18S36V FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36 Synchronous Dual-Port RA

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Detector Log Video Amplifiers (DLVA) The content of this specification may change without notification7/01/09 DLVA Detector Log Video Amplifiers (DLV

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4 Megabit (512K x 8) SuperFlash EEPROM SST28SF040 / SST28LF040 / SST28VF040 Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-onl

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AS8SS51R2AK3M2 & AS8S512K32A 512K x 32 SRAM OPTIONS SRAM MEMORY ARRAY Operating Temp. Ranges AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-946

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Austin Semiconductor, Inc. AS8SF384K32 128K x 16 SRAM & PIN ASSIGNMENT (Top View) 512K x 16 FLASH SRAM / FLASH MEMORY ARRAY FEATURES • Operation with

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Austin Semiconductor, Inc. SRAM AS8S512K32 & AS8S512K32A 512K x 32 SRAM SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-94611 (Mil

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128K x 16 SRAM & 512K x 16 FLASH SRAM / FLASH MEMORY ARRAY FEATURES • Operation with single 5V supply • High speed: 35ns SRAM, 90ns FLASH • Built in

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CXA1518Q/S EIAJ Sound Multiplexing Decoder Description The CXA1518Q/S are bipolar ICs designed for EIAJ TV sound multiplexing decoders. These ICs prov

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SH5127UD351838SE May 22, 2015 Part Numbers SH5127UD351838SE Ordering Information Description Device Vendor 512Mx72 (4GB), DDR3, 240-Pin Unbuffere

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4 Mbit (512K x8) SuperFlash EEPROM SST28SF040A / SST28VF040A SST28SF040A / SST28VF040A5.0 & 2.7 4Mb (x8) Byte-Program, Small Erase Sector flash memori

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www.DataSheet4U.com SMD General Purpose Bridge Rectifier DF15005S-G thru DF1510S-G Glass Passivated Type Reverse Voltage: 50 ~ 1000 Volts Forward Cur

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SRAM Austin Semiconductor, Inc. 512K x 32 SRAM SRAM Memory Array MCM FEATURES • • • • • • • • • Fast access times: 10, 12, 15, 17 and 20ns Fast OE\ ac

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i PEM 16 M b ASYNC SRAM Mb Austin Semiconductor, Inc. AS8SLC512K32PEC 16Mb, 512Kx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated M

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iPEM 16 Mb ASYNC SRAM AS8SLC512K32PECA 16Mb, 512Kx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES Integrated

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iPEM 16 MB ASYNC SRAM AS8S512K32PECA 16Mb, 512Kx32 CMOS 5.0V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES Integrated

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Revision History 512M SDRAM 54/86pin TSOP II Package Revision Details Rev 1.0 Preliminary datasheet AS4C16M32SC-7TIN AS4C32M16SC-7TIN AS4C64M8SC-7TIN

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