RA-9W-K Datasheet | Specifications & PDF Download

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DC/DC Converter TMR 9WI Series, 9 Watt • Highest power density in SIP-8 metal package (optional plastic package) • Ultra wide 4:1 input voltage rang

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128Mb 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W128GH, M29W128GL Features • Supply voltage – VCC = 2.7–3.6V (pro

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SMD Type Surface Mount Fast Switching Diode Array KAS19W - KAS21W (BAS19W - BAS21W) Diodes Features Fast Switching Speed Surface Mount Package ldeal

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C Series General Application Type: C0402 [EIA CC01005] C0603 [EIA CC0201] C1005 [EIA CC0402] C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206]

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Features  Fast Switching Speed  Surface Mount Package Ideally Suited for Automated Insertion  For General Purpose Switching Applications  High Con

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www.DataSheet4U.com DataSheet4U.com DataShee DataSheet4U.com DataSheet 4 U .com SDC09W5P

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Features • Surface Mount Package Ideally Suited for Automated Insertion • Suitable for ultra-low leakage current applications, including high-precisio

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256Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W256GH, M29W256GL Features • Supply voltage – VCC = 2.7–3.6V (pr

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GRM155R60J105KE19# “#” indicates a package specification code. < List of part numbers with package codes > GRM155R60J105KE19D , GRM155R60J105KE19W ,

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DC/DC Converter TMR 9WI Series, 9 Watt • Highest power density in SIP-8 metal package (optional plastic package) • Ultra wide 4:1 input voltage rang

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BC856W BC859W BC856W BC859W PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflä

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64Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W640FT, M29W640FB Features • Supply voltage – VCC = 2.7–3.6V (pro

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NPN Silicon AF Transistors BC846W BC850W
For AF input stages and driver applications
High current gain
Low collector-emitter saturation volt

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512Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W512GH70N3E, M29W512GH7AN6E Features • Stacked device (two 256Mb

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64Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W640FT, M29W640FB Features • Supply voltage – VCC = 2.7–3.6V (pro

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Steering Diode Arrays - ESD Suppressors CDA Series-G (RoHS Device) Features (16kV) IEC 61000-4-2 capable Fast Reverse Recovery Time Fast Turn on Time

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RFM69W RF M69W I SM T R ANS C EI VE R MO DUL E GENERAL DESCRIPTION The RFM69W is a transceiver module capable of operation over a wide frequency range

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256Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W256GH, M29W256GL Features • Supply voltage – VCC = 2.7–3.6V (pr

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Rev. 1.0, Apr. 2013 KMN9W000RM-B205 0.1, Oct. 2011 MCP Specification 2GB e·MMC + 2Gb LPDDR2 S4 SDRAM datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT

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