RB-406 Datasheet | Specifications & PDF Download

WNSC6D40650CW Silicon Carbide Diode Rev.01 - 18 May 2023 Product data sheet 1. General description Dual Silicon Carbide Schottky diode in a TO247 pl

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RBV401 - RBV406 PRV : 100 - 600 Volts Io : 4.0 Amperes SILICON BRIDGE RECTIFIERS RBV4 0.150 (3.8) 0.134 (3.4) C3 0.996 (25.3) 0.189 (4.8) 0.97

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C3D04065E 650 V, 4 A Silicon Carbide Schottky Diode Features • 650-Volt Schottky rectifier • Optimized for PFC boost diode application • Zero reverse

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C6D04065A 6th Generation 650 V, 4 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky

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C3D04060A 3rd Generation 600 V, 4 A Silicon Carbide Schottky Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier

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C3D04065A 3rd Generation 650 V, 4 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky Ba

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C3D04060E 600 V, 4 A Silicon Carbide Schottky Diode Features • 600-Volt Schottky rectifier • Optimized for PFC boost diode application • Zero reverse

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C3D04060E Silicon Carbide Schottky Diode VRRM = 600 V Z-Rec™ Rectifier Features Package IF (TC=135˚C) = 7.5 A Qc = 8.5 nC • • •

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Bridge Diodes Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) With Heatsink Electrical Characteristics (Ta = 25°C) Tstg (ºC) VF (V)

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Bridge Diodes Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) With Heatsink Electrical Characteristics (Ta = 25°C) Tstg (ºC) VF (V)

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C6D04065E 650 V, 4 A Silicon Carbide Schottky Diode Features • New 6th generation technology • Low forward voltage drop (VF) • Zero reverse recovery c

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0405SC-2200M Rev A1 0405SC-2200M 2200Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The

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C3D04060A Silicon Carbide Schottky Diode Z-Rec® Rectifier Features Package VRRM = 600 V IF (TC=135˚C) = 6 A Qc =   10 nC

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IC37 Series Specifications Dual Inline Package (DIP) Part Number (Details) Insulation Resistance: 1,000M W min. at 500V DC Dielectric Withstanding V

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Production specification Silicon Bridge Rectifiers FEATURES z Ideal for printed circuit board z Reliable low cost construction utilizing molded plast

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C3D04060F Silicon Carbide Schottky Diode VRRM = 600 V Z-Rec™ Rectifier (Full-Pak) Features Package IF (TC=95˚C) = 4 A Qc = 8.5

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www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/

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Features Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique Surge overload rating: 80 amperes peak RBV

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RIGOL User’s Guide DG4000 Series Function/Arbitrary Waveform Generator Sept. 2011 RIGOL Technologies, Inc. http://www.Datasheet4U.com RIGOL Guara

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Bridge Diodes (Schottky Barrier)

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