Production specification Silicon Bridge Rectifier.
EIC discrete Semiconductors
RBV3502 - SILICON BRIDGE RECTIFIERS
RBV3500 - RBV3510 PRV : 50 - 1000 Volts Io : 35 Amperes SILICON BRIDGE RECTIFIERS RBV25 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 ∅ 3.2 ± 0.1 20 ± 0.3 FEATURE.
GME
RBV3502 - Silicon Bridge Rectifiers
Production specification Silicon Bridge Rectifiers RBV35005--RBV3510 FEATURES Rating to 1000V PRV Surge overload rating to 400 Amperes peak .