RCX081N20 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor RCX081N20 FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS=200V(Min) ·Static Drain-Source On-Re

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RCX081N20 Nch 200V 8.0A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 200V 770mW 8.0A 40W lFeatures 1) Low on-resistance. 2) Fast switching sp

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