RD3G500GN Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor RD3G500GN FEATURES ·Drain Current –ID= 50A@ TC=25℃ ·Drain Source Voltage- : VDSS= 40V(Min) ·Static Drain-Source On-R

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RD3G500GN 　　Nch 40V 50A Power MOSFET VDSS RDS(on)(Max.) ID PD 40V 4.9mΩ ±50A 35W lFeatures 1) Low on - resistance 2) High power package (TO-252) 3)

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