isc P-Channel MOSFET Transistor RD3H045SP FEATUR.
INCHANGE
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RD3H045SP - P-Channel MOSFET
isc P-Channel MOSFET Transistor RD3H045SP FEATURES ·Drain Current –ID= -4.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= -45V(Min) ·Static Drain-Source O.
ROHM
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RD3H045SP - Power MOSFET
RD3H045SP Pch -45V -4.5A Power MOSFET Datasheet lOutline VDSS -45V RDS(on)(Max.) 155mΩ DPAK ID ±4.5A TO-252 PD 15W lFe.