RD3H080SP Datasheet | Specifications & PDF Download

isc P-Channel MOSFET Transistor RD3H080SP FEATURES ·Drain Current –ID= -8A@ TC=25℃ ·Drain Source Voltage- : VDSS= -45V(Min) ·Static Drain-Source On-

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RD3H080SP 　　Pch -45V -8A Power MOSFET 　　 Datasheet lOutline VDSS -45V 　 RDS(on)(Max.) 91mΩ DPAK ID ±8A TO-252 PD 15W 　 　　　　　　 lFeature

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