RD3H160SP Datasheet | Specifications & PDF Download

isc P-Channel MOSFET Transistor RD3H160SP FEATURES ·Drain Current –ID= -16A@ TC=25℃ ·Drain Source Voltage- : VDSS= -45V(Min) ·Static Drain-Source On

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RD3H160SP 　　Pch -45V -16A Power MOSFET 　　 Datasheet lOutline VDSS -45V 　 RDS(on)(Max.) 50mΩ DPAK ID ±16A TO-252 PD 20W 　 　　　　　　 lFeatu

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