RD3L08CGN Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor RD3L08CGN FEATURES ·Drain Current –ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-R

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RD3L08CGN 　　Nch 60V 80A Power MOSFET VDSS RDS(on)(Max.) ID PD 60V 7.0mΩ ±80A 96W lFeatures 1) Low on - resistance 2) High power small mold package

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