RD3P175SN Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor RD3P175SN FEATURES ·Drain Current –ID= 17.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source O

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RD3P175SN 　　Nch 100V 17.5A Power MOSFET 　　 Datasheet lOutline VDSS 100V 　 RDS(on)(Max.) 105mΩ DPAK ID ±17.5A TO-252 PD 20W 　 　　　　　　 lF

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