RD3S100CN Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor RD3S100CN FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 190V(Min) ·Static Drain-Source On-

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RD3S100CN 　　Nch 190V 10A Power MOSFET VDSS RDS(on)(Max.) ID PD 190V 182mΩ ±10A 85W lFeatures 1) Low on-resistance 2) Fast switching speed 3) Drive

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