RJ1G08CGN Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor RJ1G08CGN FEATURES ·Drain Current –ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS=40V(Min) ·Static Drain-Source On-Re

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RJ1G08CGN 　　Nch 40V 80A Power MOSFET VDSS RDS(on)(Max.) ID PD 40V 5.6mΩ ±80A 78W lFeatures 1) Low on - resistance 2) High power small mold package

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