P ge. ion. icat to chan ecif l sp ubject a in af .
Mitsubishi Electric Semiconductor
4
RM30TPM-H - MEDIUM POWER GENERAL USE INSULATED TYPE
P ge. ion. icat to chan ecif l sp ubject a in af es not its ar lim is is : Th metric e ic Not e para Som IM REL RY INA MITSUBISHI DIODE MODULES R.
Mitsubishi Electric Semiconductor
3
RM30TPM-M - MEDIUM POWER GENERAL USE INSULATED TYPE
P ge. ion. icat to chan ecif l sp ubject a in af es not its ar lim is is : Th metric e ic Not e para Som IM REL RY INA MITSUBISHI DIODE MODULES R.