RN2010 Datasheet | Specifications & PDF Download

RN2010,RN2011 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2010,RN2011 Switching, Inverter Circuit, Interface Circuit and Driver Cir

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*RoHS COMPLIANT Features ■ Semi-shielded construction ■ Miniature size ■ Low profile: 1.0 mm ■ Inductance range: 0.24 to 2.2 µH ■ Rated current up to

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& *AERoCHASPPCROOMVPELIDANT Features ■ Semi-shielded construction ■ Inductance range: 0.47 to 22 µH ■ Rated current up to 2.3 A ■ AEC-Q200 qualified ■

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