
RQJ0202VGDQA - Silicon P Channel MOS FET Power Switching
Preliminary Datasheet
RQJ0202VGDQA
Silicon P Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 83 mΩ typ (VGS = –4.5 V, ID = –1.
Rating:
1
★
(6 votes)