
RQJ0204XGDQA - Silicon P-Channel MOS FET
RQJ0204XGDQA
Silicon P Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 219 mΩ typ (VGS = –4.5 V, ID = –0.8 A)
• Low drive curre
Rating:
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(3 votes)